Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2019Lifetime engineering in 4H-SiC materials and devices
Rommel, Mathias; Erlekampf, Jürgen; Kallinger, Birgit; Weiße, Julietta; Berwian, Patrick; Friedrich, Jochen; Erlbacher, Tobias
2018Carbon-hydrogen-related complexes in Si
Kolkovsky, V.; Stübner, Ronald; Gwozdz, K.; Weber, Jörg
Journal Article
2018Impact of Al-ion implantation on the formation of deep defects in n-type 4H-SiC
Weiße, Julietta; Hauck, Martin; Krieger, Michael; Erlekampf, Jürgen; Mitlehner, Heinz; Bauer, Anton J.; Rommel, Mathias; Häublein, Volker; Erlbacher, Tobias; Csato, Constantin; Rüb, Michael; Akhmadaliev, Shavkat; Frey, Lothar
Conference Paper
2015Metastable defects in proton implanted and annealed silicon
Jelinek, Moriz; Laven, Johannes G.; Ganagona, N.; Job, R.; Schustereder, Werner; Schulze, Hans-Joachim; Rommel, Mathias; Frey, Lothar
2014Deep energy levels of platinum-hydrogen complexes in silicon
Badr, Elie; Pichler, Peter; Schmidt, Gerhard
Conference Paper
2014Microscopic-scale investigation of the degradation of InGaN-based laser diodes submitted to electrical stress
Meneghini, M.; Carraro, S.; Meneghesso, G.; Trivellin, N.; Mura, G.; Rossi, F.; Salviati, G.; Holc, K.; Weig, T.; Schade, L.; Karunakaran, M.A.; Wagner, J.; Schwarz, U.T.; Zanoni, E.
Conference Paper
2014A new method to increase the doping efficiency of proton implantation in a high-dose regime
Jelinek, Moriz; Laven, Johannes G.; Job, R.; Schustereder, Werner; Schulze, Hans-Joachim; Rommel, Mathias; Frey, Lothar
Conference Paper
2013Extended model for platinum diffusion in silicon
Badr, E.; Pichler, P.; Schmidt, G.
Conference Paper
2011Defects formed by pulsed laser annealing: Electrical properties and depth profiles in n-type silicon measured by deep level transient spectroscopy
Schindele, D.; Pichler, P.; Lorenz, J.; Oesterlin, P.; Ryssel, H.
Journal Article, Conference Paper
2007Degradation of the minority carrier lifetime caused by Mn-correlated defects in Ga-implanted Si:P
Beljakowa, S.; Pensl, G.; Rommel, M.
1994Effect on non-ideal delta doping layers in Al0.3Ga0.7As/In0.3Ga0.7As pseudomorphic heterostructures
Fernandez de Avila, S.; Sanchez-Rojas, J.L.; Hiesinger, P.; Gonzalez-Sanz, F.; Calleja, E.; Köhler, K.; Jantz, W.; Munoz, E.
Conference Paper
1992Comparative study of the SbGa heteroantisite and off-center OAs in GaAs
Hendorfer, G.; Bohl, B.; Fuchs, F.; Kaufmann, U.; Kunzer, M.
Journal Article
1992Impact of illumination level and oxide parameters on Shockley-Read-Hall recombination at the Si-SiO2 interface
Aberle, A.G.; Glunz, S.; Warta, W.
Journal Article
1992The influence of ion beam mixed TiSi2 layers on reverse characteristics of diodes.
Zimmermann, H.; Burte, E.P.; Dehm, C.; Gyulai, J.
Journal Article
1991Raman scattering from the intrinsic 68-meV acceptor in Ga-rich GaAs
Ko, K.H.; Lagowski, J.; Wagner, J.
Journal Article
1991SiO2-passivated high efficiency silicon solar cells - process dependence of Si-SiO2 interface recombination
Aberle, A.; Glunz, S.; Warta, W.; Kopp, J.; Knobloch, J.
Conference Paper
1989Hall effects, DLTS and optical investigations on the intrinsic 78/203 meV acceptor in GaAs.
Roos, G.; Schöner, A.; Pensil, G.; Krambrock, K.; Meyer, B.; Spaeth, J.M.; Wagner, J.
Journal Article