Fraunhofer-Gesellschaft

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Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2018Numerische Modellierung einer selbsterhaltenden Hochtemperatursynthese von nano-strukturierten Bor-Partikeln
Heger, Patrick
: Pietsch, Erik (Betreuer); Teipel, Ulrich (Erstkorrektor); Ranong, Chakkrit (Zweitkorrektor)
Master Thesis
2006Pattern Effects with the Mask Off
Nenyei, Z.; Niess, J.; Lerch, W.; Dietl, W.; Timans, P.J.; Pichler, P.
Conference Paper
2006Quantum mechanical studies of boron clustering in silicon
Deák, P.; Gali, A.; Pichler, P.
Book Article
2004Boron-interstitial cluster kinetics: Extraction of binding energies from dedicated experiments
Ortiz, C.J.; Pichler, P.; Haublein, V.; Mannino, G.; Scalese, S.; Privitera, V.; Solmi, S.; Lerch, W.
Conference Paper
2004Current understanding and modeling of B diffusion and activation anomalies in preamorphized ultra-shallow junctions
Colombeau, B.; Smith, A.J.; Cowern, N.E.B.; Pawlak, B.J.; Cristiano, F.; Duffy, R.; Claverie, A.; Ortiz, C.J.; Pichler, P.; Lampin, E.; Zechner, C.
Conference Paper
2004Quantum mechanical studies of boron clustering in silicon
Deák, P.; Gali, A.; Pichler, P.; Ryssel, H.
Conference Paper
2002Current understanding and modeling of boron-interstitial clusters
Pichler, P.
Conference Paper
1999On the influence of boron-interstitial complexes on transient enhanced diffusion
Stiebel, D.; Pichler, P.; Ryssel, H.
Conference Paper
1998On the Asymmetrical Behavior of Transient Enhanced Diffusion in Pre-Amorphized Si Wafers
Alquier, D.; Cowern, N.E.B.; Pichler, P.; Armand, C.; Martinez, A.; Mathiot, D.; Omri, M.; Claverie, A.
Conference Paper
1997Low energy implantation and transient enhanced diffusion
Cowern, N.E.B.; Collart, E.J.H.; Politiek, J.; Bancken, P.H.L.; Berkum, J.G.M. van; Kyllesbech Larsen, K.; Stolk, P.A.; Huizing, H.G.A.; Pichler, P.; Burenkov, A.; Gravensteijn, D.J.
Conference Paper
1995Optical and electrical characterization of boron-doped diamond films
Locher, R.; Wagner, J.; Fuchs, F.; Maier, M.; Gonon, P.; Koidl, P.
Journal Article
1994On modeling of ion implantation at high temperatures
Pichler, P.; Schork, R.
Journal Article
1994Simulation of buried layer experiments containing all four dopant species
Ghaderi, K.; Hobler, G.; Budil, M.; Pötzl, H.; Pichler, P.; Ryssel, H.; Hansch, W.; Eisele, I.; Tian, C.; Stingeder, G.
Conference Paper
1993An explanation of transient-enhanced diffusion and electrical activation of boron in crystalline silicon during postimplantation annealing
Jäger, H.-U.
Journal Article
1992Evaluation of the point defect bulk recombination rate by ion implantation at high temperatures.
Klauser, T.; Pichler, P.; Ryssel, H.; Schork, R.
Journal Article
1992An explanation of transient enhanced diffusion and electrical activation of boron in crystalline silicon during post-implantation annealing
Jäger, H.-U.
Conference Paper
1989Thermoanalytische Untersuchung der Oxidation von Bor
Eisenreich, N.; Schmid, H.
Journal Article
1987Determination of the performance of ignition powders
Hund, M.; Müller, D.; Volk, F.
Conference Paper
1987Emissions spectroscopy of boron ignition and combustion in the range of 0.2 mym to 5.5 mym
Eisenreich, N.; Liehmann, W.
Conference Paper
1985Innenballistische Bewertung der Wirkung von Anzündmitteln
Bathelt, H.; Hund, M.; Müller, D.; Volk, F.
Conference Paper
1983Phonon softening in ultra heavily doped Si and Ge.
Cardona, M.; Axmann, A.; Compaan, A.; Contreras, G.
Journal Article
1982Baron ion implantation in Hg(1-x)Cd(x)Te
Baars, J.; Hurrle, A.; Rothemund, W.; Fritzsche, C.R.; Jakobus, T.
Journal Article
1981Annealing of boron-implanted silicon using a CW CO2-laser.
Tsien, P.H.; Tsou, S.C.; Takai, M.; Roeschenthaler, D.; Ramin, M.; Ryssel, H.; Ruge, I.; Wittmaack, K.
Journal Article