Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2018Comparison of reliability of 100 nm AlGaN/GaN HEMTs with T-gate and SAG-gate technology
Dammann, Michael; Baeumler, Martina; Brueckner, Peter; Kemmer, Tobias; Konstanzer, Helmer; Graff, Andreas; Simon-Najasek, Michél; Quay, Rüdiger
Journal Article
2016Experimental analysis of the gate-leakage-induced failure mechanism in GaN HEMTs
Unger, C.; Mocanu, M.; Pfost, M.; Waltereit, P.; Reiner, R.
Conference Paper
2015Monolithic three-stage 6-18GHz high power amplifier with distributed interstage in GaN technology
Dennler, P.; Maroldt, S.; Quay, R.; Ambacher, O.
Conference Paper
2014Watt-level non-uniform distributed 6-37 GHz power amplifier MMIC with dual-gate driver stage in GaN technology
Dennler, P.; Quay, R.; Brueckner, P.; Schlechtweg, M.; Ambacher, O.
Conference Paper
2013Novel semi-reactively-matched multistage broadband power amplifier architecture for monolithic ICs in GaN technology
Dennler, P.; Quay, R.; Ambacher, O.
Conference Paper
20128-42 GHz GaN non-uniform distributed power amplifier MMICs in microstrip technology
Dennler, P.; Schwantuschke, D.; Quay, R.; Ambacher, O.
Conference Paper
2012AlGaN/GaN power amplifiers for ISM applications
Krausse, D.; Benkhelifa, F.; Reiner, R.; Quay, R.; Ambacher, O.
Journal Article, Conference Paper
2012High efficiency X-band AlGaN/GaN MMICs for space applications with lifetimes above 10(5) hours
Waltereit, P.; Kühn, J.; Quay, R.; Raay, F. van; Dammann, M.; Cäsar, M.; Müller, S.; Mikulla, M.; Ambacher, O.; Lätti, J.; Rostewitz, M.; Hirche, K.; Däubler, J.
Conference Paper
2011Modeling and realization of GaN-based dual-gate HEMTs and HPA MMICs for Ku-band applications
Dennler, P.; Raay, F. van; Seelmann-Eggebert, M.; Quay, R.; Ambacher, O.
Conference Paper
2010Development of rugged 2 GHz power bars delivering more than 100 W and 60% power added efficiency
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Müller, S.; Mikulla, M.; Ambacher, O.; Harm, L.; Lorenzini, M.; Rödle, T.; Riepe, K.; Bellmann, K.; Buchheim, C.; Goldhahn, R.
Journal Article, Conference Paper
2010GaN based power amplifiers for broadband applications from 2 GHz to 6 GHz
Sledzik, H.; Reber, R.; Bunz, B.; Schuh, P.; Oppermann, M.; Musser, M.; Seelmann-Eggebert, M.; Quay, R.
Conference Paper
2010GaN-based amplifiers for wideband applications
Schuh, P.; Sledzik, H.; Reber, R.; Widmer, K.; Oppermann, M.; Musser, M.; Seelmann-Eggebert, M.; Kiefer, R.
Journal Article
2010High-temperature modeling of AlGaN/GaN HEMTs
Vitanov, S.; Palankovski, V.; Maroldt, S.; Quay, R.
Journal Article, Conference Paper
2010Nanosensors for label-free measurement of sodium ion fluxes of neuronal cells
Gebinoga, M.; Silveira, L.; Cimalla, I.; Dumitrescu, A.; Kittler, M.; Lübbers, B.; Becker, A.; Lebedev, V.; Schober, A.
Conference Paper, Journal Article
2010A novel bio-functionalization of AlGaN/GaN-ISFETs for DNA-sensors
Linkohr, S.; Schwarz, S.; Krischok, S.; Lorenz, P.; Cimalla, V.; Nebel, C.E.; Ambacher, O.
Journal Article, Conference Paper
2010Piezoelectric actuated epitaxially grown AlGaN/GaN-resonators
Niebelschütz, F.; Brueckner, K.; Tonisch, K.; Stephan, R.; Cimalla, V.; Ambacher, O.; Hein, M.A.
Journal Article, Conference Paper
2010Search for a suitable ohmic metallization scheme to GaN/AlGaN heterostructures for sub-micron devices
Kolaklieva, L.; Kakanakov, R.; Chitanov, V.; Dulgerova, P.; Cimalla, V.
Conference Paper
2009Resonant piezoelectric ALGAN/GAN mems sensors in longitudinal mode operation
Brueckner, K.; Niebelschütz, F.; Tonisch, K.; Stephan, R.; Cimalla, V.; Ambacher, O.; Hein, M.A.
Conference Paper
2009X-band T/R-module front-end based on GaN MMICs
Schuh, P.; Sledzik, H.; Reber, R.; Fleckenstein, A.; Leberer, R.; Oppermann, M.; Quay, R.; Raay, F. van; Seelmann-Eggebert, M.; Kiefer, R.; Mikulla, M.
Journal Article
2008Efficient AlGaN/GaN HEMT power amplifiers
Quay, R.; Raay, F. van; Kühn, J.; Kiefer, R.; Waltereit, P.; Zorcic, M.; Musser, M.; Bronner, W.; Dammann, M.; Seelmann-Eggebert, M.; Schlechtweg, M.; Mikulla, M.; Ambacher, O.; Thorpe, J.; Riepe, K.; Rijs, F. van; Saad, M.; Harm, L.; Rödle, T.
Conference Paper
2008GaN MMIC based T/R-module front-end for X-band applications
Schuh, P.; Sledzik, H.; Reber, R.; Fleckenstein, A.; Leberer, R.; Oppermann, M.; Quay, R.; Raay, F. van; Seelmann-Eggebert, M.; Kiefer, R.; Mikulla, M.
Conference Paper
2008Plasma assisted molecular beam epitaxy of AlGaN/GaN high electron mobility transistors
Aidam, R.; Kirste, L.; Kunzer, M.; Müller, S.; Waltereit, P.
Journal Article
2008Two-dimensional electron gas based actuation of piezoelectric AlGaN/GaN microelectromechanical resonators
Brueckner, K.; Niebelschütz, F.; Tonisch, K.; Michael, S.; Dadgar, A.; Krost, A.; Cimalla, V.; Ambacher, O.; Stephan, R.; Hein, M.A.
Journal Article
2007GaN HEMT: Trends in civil and military circuit applications
Quay, R.; Raay, F. van; Tessmann, A.; Kiefer, R.; Dammann, M.; Mikulla, M.; Schlechtweg, M.; Weimann, G.
Conference Paper
200620W GaN HPAs for next generation X-band T/R-modules
Schuh, P.; Leberer, R.; Sledzik, H.; Oppermann, M.; Adelseck, B.; Brugger, H.; Behtash, R.; Leier, H.; Quay, R.; Kiefer, R.
Conference Paper
2002AlGaN/GaN HEMTs: Device aspects for a process technology at K-Band
Raay, F. van
Conference Paper