Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
1997Properties of Mg and Zn acceptors in MOVPE GaN as studied by optically detected magnetic resonance
Kunzer, M.; Baur, J.; Kaufmann, U.; Schneider, J.; Amano, H.; Akasaki, I.
Journal Article
1993Point defects in silicon carbide.
Schneider, J.; Maier, K.
Journal Article
1991Electrical, magnetic circular dichroism and Raman spectroscopic investigations on the EK2 double acceptor -78/203 meV- in GaAs.
Roos, G.; Schöner, A.; Pensl, G.; Meyer, B.K.; Newman, R.C.; Wagner, J.
Journal Article
1991Raman scattering from the intrinsic 68-meV acceptor in Ga-rich GaAs
Ko, K.H.; Lagowski, J.; Wagner, J.
Journal Article
1988Quantitative optical analysis of residual shallow acceptors in semi-insulating GaAs
Löhnert, K.; Jantz, W.; Ramsteiner, M.; Wagner, J.
Conference Paper
1987Electronic raman scattering of the 78 meV/203 meV double acceptor in GaAs
Newmann, R.C.; Maguire, J.; Dischler, B.; Seelewind, H.; Wagner, J.
Conference Paper
1986Raman scattering as a quantitative tool for residual acceptor assessment in semi-insulating GaAs
Kaufmann, U.; Seelewind, H.; Wagner, J.
Journal Article
1983Evidence of amphoteric behavior of Si in VPE InP.
Pomrenke, G.S.
Journal Article