Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2019Comparison between Ni-SALICIDE and Self-Aligned Lift-Off Used in Fabrication of Ohmic Contacts for SiC Power MOSFET
Sledziewski, Tomasz; Erlbacher, Tobias; Bauer, Anton J.; Frey, Lothar; Chen, Ximing; Zhao, Yanli; Li, Chengzhan; Dai, Xiaoping
Conference Paper
2019Improving 5V Digital 4H-SiC CMOS ICs for Operating at 400°C Using PMOS Channel Implantation
Albrecht, M.; Erlbacher, T.; Bauer, A.J.; Frey, L.
Conference Paper
2019Influence of Trench Design on the Electrical Properties of 650V 4H-SiC JBS Diodes
Rusch, Oleg; Moult, Jonathan; Erlbacher, Tobias
Conference Paper
2019Process and design optimization of SiC MOSFET for low on-state resistance
Sledziewski, Tomasz; Erlbacher, Tobias; Bauer, Anton
Presentation
2019Raman Spectroscopy Characterization of Ion Implanted 4H-SiC and its Annealing Effects
Xu, Zongwei; Song, Ying; Rommel, Mathias; Liu, T.; Kocher, Matthias; He, Z.D.; Wang, H.; Yao, B.T.; Liu, L.; Fang, Fengzhou
Conference Paper
2019Surface Characterization of Ion Implanted 4H-SiC Epitaxial Layers with Ion Energy and Concentration Variations
Kim, Hong-Ki; Kim, Seongjun; Buettner, Jonas; Lim, Minwho; Erlbacher, Tobias; Bauer, Anton J.; Koo, Sang-Mo; Lee, Nam-Suk; Shin, Hoon-Kyu
Conference Paper
2018Raman spectroscopy characterization of ion implanted 4H-SiC and its annealing effects
Xu, Zongwei; Song, Y.; Rommel, Mathias; Liu, T.; Kocher, Matthias; He, Z.D.; Wang, H.; Yao, B.T.; Liu, L.; Fang, F.Z.
Poster
20174.5 kV SiC junction barrier schottky diodes with low leakage current and high forward current density
Schöck, Johannes; Büttner, Jonas; Rommel, Mathias; Erlbacher, Tobias; Bauer, Anton
Conference Paper
2017Point contact current voltage measurements of 4H-SiC samples with different doping profiles
Kocher, Matthias; Niebauer, Michael; Rommel, Mathias; Haeublein, Volker; Bauer, Anton
Conference Paper
20164.5 kV SiC junction barrier schottky diodes with low leakage current and high forward current density
Schöck, Johannes; Büttner, Jonas; Rommel, Mathias; Erlbacher, Tobias; Bauer, Anton
Poster
2016Ion implanted 4H-SiC UV pin-diodes for solar radiation detection - simulation and characterization
Matthus, Christian D.; Erlbacher, Tobias; Burenkov, Alexander; Bauer, Anton J.; Frey, Lothar
Conference Paper
2016Modelling of effective minority carrier lifetime in 4H-SiC n-type epilayers
Kaminzky, Daniel; Kallinger, Birgit; Berwian, Patrick; Rommel, Mathias; Friedrich, Jochen
Conference Paper
2016Potential of 4H-SiC CMOS for high temperature applications using advanced lateral p-MOSFETs
Albrecht, Matthäus; Erlbacher, Tobias; Bauer, Anton J.; Frey, Lothar
Conference Paper
2016Systematic characterization of doping profiles in 4H-SiC by point contact current voltage measurements
Kocher, Matthias; Niebauer, Michael; Rommel, Mathias; Haeublein, Volker; Bauer, Anton
Poster
2015Imaging defect luminescence measurements of 4H-SiC by UV-PL
Kaminzky, Daniel; Roßhirt, Katharina; Kallinger, Birgit; Berwian, Patrick; Friedrich, Jochen; Oppel, Steffen; Schneider, Adrian; Schütz, Michael
Presentation
2015Influence of growth temperature on the defect density for 4H-SiC homoepitaxy
Kaminzky, Daniel; Roßhirt, Katharina; Kallinger, Birgit; Berwian, Patrick; Friedrich, Jochen
Poster
2015Modelling of effective minority carrier lifetimes in 4H-SiC n-type epilayers
Kaminzky, Daniel; Kallinger, Birgit; Berwian, Patrick; Rommel, Mathias; Friedrich, Jochen
Poster
2013HCl assisted growth of thick 4H-SiC epilayers for bipolar devices
Kallinger, Birgit; Ehlers, Christian; Berwian, Patrick; Rommel, Mathias; Friedrich, Jochen
Poster
2012Hall effect characterizations of 4H-SiC MOSFETs: Influence of nitrogen channel implantation
Mortet, V.; Bedel-Pereira, E.; Bobo, J.; Strenger, C.; Uhnevionak, V.; Burenkov, A.; Cristiano, F.; Bauer, A.
Poster
2002Electrical activation of high concentrations of N+ and P+ ions implanted into 4H-SiC
Laube, M.; Schmid, F.; Pensl, G.; Wagner, G.; Linnarsson, M.; Maier, M.
Journal Article
2002Electrical activation of implanted phosphorus ions in (0001)/(1120)-oriented 4H-SiC
Schmid, F.; Laube, M.; Pensl, G.; Wagner, G.; Maier, M.
Conference Paper
2002Electrical activation of implanted phosphorus ions in [0001]- and [11-20]-oriented 4H-SiC
Schmid, F.; Laube, M.; Pensl, G.; Wagner, G.; Maier, M.
Journal Article