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Title
Diodenlaser-Oszillator oder- Verstaerker mit wenigstens einer lichtleitenden Halbleiterschicht
Date Issued
1998
Author(s)
Patent No
1997-19717571
Abstract
The laser diode oscillator has an InAlGaAs structure with the aluminium structure formed on top on a GaAs substrate. The conducting semiconductor layer (LH) has a thickness of one micron on both sides. This provides a refractive index that is greater than that of the semiconductor material that is covered. A symmetric region (1) is formed that has a zero percent aluminium content and is within a quantum wave structure (2). USE - Solid state laser systems for material processing, eg cutting, welding or medical applications. ADVANTAGE - Improved beam quality for high power.
Language
de
Patenprio
DE 1997-19717571 A: 19970425