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Development of IR photovoltaic detectors using molecular beam epitaxy of IV-VI compounds.

Entwicklung photovoltaischer Detektoren mit IV-VI MBE
 
: Kuhn, S.; Lambrecht, A.; Tacke, M.; Halford, B.

Orszagos Müszaki Informacios Központ e Könyvtar, Budapest:
Photonic measurements - photon-detectors. Proceedings
Budapest, 1987
ISBN: 963-592-752-5
S.225-231 : Abb.,Lit.
Symposium on Photon-Detectors <13, 1987, Braunschweig>
Englisch
Konferenzbeitrag
Fraunhofer IPM ()
Detektor(photovoltaisch); IR-Detektor; MBE; PbEuSe

Abstract
Molecular Beam Epitaxy (MBE) of IV-VI compounds has proven to be a good tool for the epitaxial growth of heterostructure lasers. In this paper we describe photovoltaic devices that were made from Lead-Europium-Selenide. Data are given on the optical and electrical performance. (IPM)

: http://publica.fraunhofer.de/dokumente/PX-9622.html