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1987
Conference Paper
Titel
Development of IR photovoltaic detectors using molecular beam epitaxy of IV-VI compounds.
Alternative
Entwicklung photovoltaischer Detektoren mit IV-VI MBE
Abstract
Molecular Beam Epitaxy (MBE) of IV-VI compounds has proven to be a good tool for the epitaxial growth of heterostructure lasers. In this paper we describe photovoltaic devices that were made from Lead-Europium-Selenide. Data are given on the optical and electrical performance. (IPM)
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