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Development of CMOS-compatible p-channel junction-field-effect transistors for very low noise application

: Skapa, H.; Stuch, D.; Vogt, H.; Zimmer, G.

ESSDERC '87. 17th European Solid State Device Research Conference. Proceedings
Bologna: Verlag Technoprint, 1987
S.675-678 : Abb.,Lit.
European Solid State Device Research Conference (ESSDERC) <17, 1987, Bologna>
Fraunhofer IMS ()

CMOS compatible Junction-Field-Effect-Transistors (JFETs) for very low noise applications with different transistor layouts have been developed and tested. The 1/f-corner frequency is below 1 kHz. An equivalent noise voltage density of 1 nV/Hz at 100 kHz was achieved. The transistors were applied as discrete elements in the inputstage of a transimpedance amplifier for plumbicon tubes. A total signal to noise ratio of 55 dB has been measured. (IMS)