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Development and simulation of a silicon-based pressure sensor with digital output

 

TU Berlin:
Micromechanics Europe 1990. Technical Digest
Berlin/West, 1990
Workshop on Micromachining, Micromembranes and Microsystems <2, 1990>
Englisch
Konferenzbeitrag
Fraunhofer IFT; 2000 dem IZM eingegliedert
CMOS-inverter; integration; piezoresistive effect; pressure sensor; simulation

Abstract
A silicon-based pressure sensor with digital output has been developed by combining a piezoresistive pressure transducer, a CMOS circuit and a chip containing thin-film poly silicon trimming resistors. Digitalization of the transducer's analogue output signal is achieved by connecting it as input to a double-CMOS-inverter cascade with a poly silicon trimming resistor connected to the first inverter's source. Adjustment of the cascade's detection threshold is performed by laser-trimming of this resistor. Four of these digitizing circuits with different threshold voltages were connected in parallel. Simulation of the developed sensor has been performed with SPICE after implementing a novel simulation technique for piezoresistors. These were modelled by separating the temperature and pressure dependences into independent factors and constructing an equivalent into a SPICE netlist.

: http://publica.fraunhofer.de/dokumente/PX-9553.html