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Determination of vacancy concentrations in the bulk of silicon wafers by platinum diffusion experiments

Bestimmung der Konzentration von Gitterleerstellen in Silicium Wafern durch Diffusionsexperimente mit Platin
: Jacob, M.; Pichler, P.; Ryssel, H.; Falster, R.

Volltext urn:nbn:de:0011-px-95093 (206 KByte PDF)
MD5 Fingerprint: 6aae41983aab98a25afc67c8fa91b183
Copyright AIP
Erstellt am: 7.2.2015

Journal of applied physics 82 (1997), Nr.1, S.182-191
ISSN: 0021-8979
ISSN: 1089-7550
Zeitschriftenaufsatz, Elektronische Publikation
Fraunhofer IIS B ( IISB) ()
diffusion; Gitterleerstellen; Platin; Punktdefekt; silicium; Silizium

Diffusion of platinum at low temperatures is a convenient way to characterize vacancy profiles in silicon. This article summarizes the experiments performed to find a standard procedure, discusses the pitfalls and limitations, and shows the applicability of the method. The results of experiments with FZ and CZ samples in the temperature range from 680 deg C to 842 deg C were found to disagree with the predictions of models published in the literature. Therefore, parameters governing the diffusion of point defects and platinum in silicon were determined for this temperature range.