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Determination of the GaN/AlN band offset via the -/0 acceptor level of iron

Bestimmung der GaN/AlN Banddiskontinuität mittels des -/0 Akzeptorniveaus von Eisen
: Baur, J.; Maier, K.; Kunzer, M.; Kaufmann, U.; Schneider, J.


Applied Physics Letters 65 (1994), Nr.17, S.2211-2213 : Abb.,Lit.
ISSN: 0003-6951
ISSN: 1077-3118
Fraunhofer IAF ()
AlN; band-offset; Banddiskontinuität; GaN; photoluminescence; Photolumineszenz

A characteristic infrared luminescence spectrum, dominated by a zero-phonon line at 1.30 eV, has been observed on AlN polycrystalline material. It is assigned to the spin-forbidden internal 3d-3d transition high4 T sub1 (G) to high6 A sub1 (S) of Fe high3plus/subAl (3d high5). By photoluminescence excitation spectroscopy the (-/0) acceptor level of iron in AlN could be located at E subV plus 3.0 eV. The corresponding value for iron in GaN is E subV plus 2.5 eV. From these values, the valence-band offset in AlN/GaN heterojunction is predicted as DeltaE subV equal 0.5 eV, the conduction-band offset as DeltaE subC equal 2.3 eV