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1987
Conference Paper
Titel
Depth profile analysis of hydrogenated carbon layers on silicon and germanium by XPS, AES and SIMS
Alternative
Tiefenprofil-Analyse von wasserstoffhaltigen Kohlenstoffilmen auf Silizium und Germanium mittels XPS, AES und SIMS
Abstract
Depth profiles of a-C:H layers on Si and Ge have been analyzed by XPS, AES and SIMS. The distribution of interfacial carbide and of impurities and their influence on film adhesion are discussed.
Author(s)
Language
English
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