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Deposition of high quality SiO2 layers from TEOS by excimer laser

: Klumpp, A.; Sigmund, H.


Applied surface science 36 (1989), Nr.1-4, S.141-149
ISSN: 0169-4332
Fraunhofer IFT; 2000 dem IZM eingegliedert
laser induced deposition; SiO2-layer

SiO2 layers were deposited on silicon wafers from a mixture of TEOS (tetraethylorthosilicate) and oxygen by ArF-excimer laser radiation. The depositions were studied as a function of substrate temperature, partial pressure and laser fluence. Deposition rates as high as 2000 A/min at pluse energies of 100 mJ/square centimetre may easily be obtained. The physical properties of the SiO2 layers were investigated by FT-IR spectroscopy, Rutherford backscattering and ellipsometry. The electrial properties of breakdown voltage, interface state density and mobile-ion density are also given. The SiO2 layers show nearly the same quality as thermally grown SiO2 layers.