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Deposition and characterization of diamond epitaxial thin films on silicon substrates



Applied physics. A (1993), Nr.57, S.483
ISSN: 0340-3793
ISSN: 0721-7250
ISSN: 0947-8396
International Conference on Metallurgical Coatings and Thin Films <20, 1993, San Diego/Calif.>
Fraunhofer IST ()
Diamant; diamond; Heteroepitaxie; heteropitaxy; hydrogen; Keimbildung; Methan; methane; microwave plasma CVD; Mikrowellen-Plasma-CVD; nucleation; Raman; Röntgenstrahl-Polfigur-Analyse; silicium; silicon; Wasserstoff; X-ray pole figure analysis

Heteroepitaxial diamond growth has been attempted on mirror-polished monocrystalline (001), (111), and (110) silicon substrates by microwave plasma CVD. The surface morphology and the crystallographic properties of the films were characterized by means of scanning electron microscopy (SEM), Raman spectroscopy, x-ray diffraction, and x-ray and Raman pole-figure analyses. The results demonstrate epitaxial growth of diamond on both (001) and (111) oriented silicon substrates. Preliminary results give strong evidence for substrate-induced orientation of the diamond crystallites also on (110) oriented silicon substrate. The heteroepitaxy can be assigned to the oriented covalent bonding across the interface between diamond and silicon.