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The deposition and characterization of β-SiC and diamond/β-SiC composite films

: Jiang, X.; Klages, C.-P.


Diamond and Related Materials 2 (1993), Nr.2-4, S.523-527
ISSN: 0925-9635
Diamond Films <3, 1992, Heidelberg>
Zeitschriftenaufsatz, Konferenzbeitrag
Fraunhofer IST ()
beta-SiC; Composite-Film; Diamant; diamond; hydrogen; Methan; methane; microwave plasma CVD; Mikrowellen-Plasma-CVD; tetramethylsilane; Tetramethysilan; Wasserstoff

Cubic silicon carbide (ß-SiC) has been deposited by a microwave plasma assisted chemical vapor deposition (MWCVD) process, using a hydrogen/tetramethylsilane (TMS) gas mixture. The conditions for preparing ß-SiC correspond well with those for diamond deposition. The necessary silicon content in the gas phase for a ß-SiC growth rate comparable with normal diamond deposition is only 1% of carbon for diamond growth. Based on this knowledge an idea to prepare diamond/ß-SiC composite film was developed and successfully realized. The experimental details are described and the growth mechanism is discussed.