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Dependence of resonant electron and hole tunnelling times between quantum wells on barrier thickness.

Abhängigkeit der resonanten Elektron- und Lochtunnelzeiten zwischen Quantum Wells von der Barrierendicke
 
: Heberle, A.P.; Zhou, X.Q.; Tackeuchi, A.; Rühle, W.W.; Köhler, K.

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Semiconductor Science and Technology 9 (1994), S.519-522 : Abb.,Lit.
ISSN: 0268-1242
ISSN: 1361-6641
Englisch
Zeitschriftenaufsatz
Fraunhofer IAF ()
III-V Halbleiter; III-V semiconductors; Quantentopf; quantum wells; time resolved measurement; zeitaufgelöste Messung

Abstract
We investigated resonant tunnelling of electrons and holes between coupled quantum wells using time-resolved luminescence spectroscopy. Exponential dependence of tunnelling times on barrier width is observed for electrons but not for holes. The tunnelling times of electrons are correctly described by a model which takes into account inhomogeneous broadening.

: http://publica.fraunhofer.de/dokumente/PX-9207.html