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1986
Conference Paper
Titel
Defect characterization in gallium arsenide by infrared-spectroscopic techniques
Abstract
A survey is given on recent progress in defect identification and characterisation in gallium arsenide (GaAs) by infrared spectroscopic techniques. Examples to be presented are shallow donors and acceptors, deep antisite double donors and double acceptors, the 3d-transition metal acceptor family and 4f-rare earth dopants. Defect specific experimental methods which have been applied include optical absorption, inelastic (Raman) light scattering, photoluminescence (PL) and its excitation (PLE), photo-electron spin resonance (photo-ESR) and optically detected magnetic resonance (ODMR). (IAF)