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Deep donor state of vanadium in cubic silicon carbide -3C-SiC-

Der tiefe Donator-Zustand von Vanadium in kubischem Siliziumkarbid -3C-SiC-


Applied Physics Letters 65 (1994), Nr.14, S.1811-1813 : Abb.,Lit.
ISSN: 0003-6951
ISSN: 1077-3118
Fraunhofer IAF ()
band discontinuity; band-offset; Banddiskontinuität; ESR; vanadium

Electron spin resonance (ESR) of silicon-substitutional vanadium in its neutral V (exp 4+)(ind Si) (3d (exp 1)) state has been observed in cubic bulk 3C-SiC single crystals. By photo-ESR the position of the (0/+) deep donor level of vanadium could be located at E (ind V)+1.7eV. Using this level as common reference in 3C-SiC and 6H-SiC, the valence-band discontinuity in the 3C-SiC/6H-SiC interface is predicted as Delta E (ind V)=0.l eV, with the valence-band of 3C-SiC lying lower in energy. We also offer an explanation for the absence of intra-3d-shell infrared luminescence of V (exp 4+) (3d (exp 1)) in 3C-SiC.