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Crystalline thin film silicon solar cells -CTFSSC-

 
: Wagner, B.; Friedrich, F.; Schillinger, N.; Eyer, A.

Guimaraes, L.; Palz, W.; Reyff, C. de; Kiess, H.; Helm, P.:
Eleventh E.C. Photovoltaic Solar Energy Conference '92. Proceedings : International conference, held at Montreux, Switzerland, 12 - 16 October 1992
Chur: Harwood Academic Publishers, 1993 (EUR 14811/EN)
ISBN: 3-7186-5380-X
S.397-400
Photovoltaic Solar Energy Conference <11, 1992, Montreux>
Englisch
Konferenzbeitrag
Fraunhofer ISE ()
crystalline silicon thin film; optical heating; recrystallization; solar cell

Abstract
Crystalline Thin Film Silicon Solar Cells (CTFSSC) in the thickness range of 30 mym are of great interest, since on one hand they promise to reduce the amount of expensive high quality silicon needed, and on the other hand higher efficiencies compared to solar cells made from multicrystalline silicon sheets can be expected. CTFSSC's are presented, which were made from 30 mym thick boron doped silicon CVD films on oxidized CZ silicon sustrates. Contact holes are etched into the oxide. To enhance the crystal quality of the deposited poly silicon film, it was melted and recrystallized under a capping layer with our halogen lamp equipped Large Area Heater (LAH). The crystallisation starts in the contact holes and extents laterally until crystallisation fronts, starting at adjoining holes, meet. First test solar cells prepared by a simple process showed efficiencies of up to 6.4 %. LBIC measurements showed good homogeneity across the cell area. An EBIC analysis of a cross section of the fil m exhibits a comparable electrical response as the CZ silicon substrate.

: http://publica.fraunhofer.de/dokumente/PX-8832.html