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Correlation of the D-band photoluminescence with spatial properties of dislocations in silicon

: Weronek, K.; Weber, J.; Höpner, A.; Ernst, F.; Stefaniak, M.; Alexander, H.; Buchner, R.

ICDS-16 '91
ICDS <16, 1991, Bethlehem>
Fraunhofer IFT; 2000 dem IZM eingegliedert
D-band; dislocation; impurity; photoluminescence; Photolumineszenz; recombination; Silizium; Versetzung; Verunreinigung

The D-band recombination in silicon is found to be independent of impurities trapped at dislocations. Deliberate contamination of high purity silicon samples, containing dislocations, with copper or iron results in a drastic decrease of the D-band photoluminescence. After a reduction of the copper and iron concentration, the D-bands reappear and increase in intensity by two orders of magnitude. The intensities and polarizations of the D-band photoluminescence depend strongly on the direction of detection and on the structure of the dislocation. We correlate the Dsub1/Dsub2- recombination with the stacking fault between two Shockley partial dislocations.