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1997
Conference Paper
Titel
Coplanar amplifiers up to W-band using InP-based dual-gate HEMTs
Abstract
The performance of InP-based dual-gate HEMTs in a cascode configuration is demonstrated by the realization of a number of coplanar amplifiers. Three single-stage dual-gate amplifiers with a stable insertion gain of 16.4, 12.4 and 7.5 dB at respectively 58.5, 93.5 and 111 GHz are successfully realized. For a distributed amplifier using meandered coplanar lines a gain of 8.8 dB with a 3-dB bandwidth of 97 GHz is obtained.
Author(s)