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Contactless mapping of mesoscopic resistivity variations in semi-insulating substrates

Kontaktlose Messung vom mesoskopischen Widerstandsvariationen in semiisolierenden Substraten
: Stibal, R.; Wickert, M.; Hiesinger, P.; Jantz, W.


Materials Science and Engineering, B. Solid state materials for advanced technology 66 (1999), Nr.1-3, S.21-25
ISSN: 0921-5107
Fraunhofer IAF ()
contactless measurement; GaAs; kontaktlose Messung; mapping; mesoscope; mesoskopisch; Rasterung; resistivity; semi-insulating; semiisolierend; substrate; topography; Widerstand

The lateral homogeneity of the electrical resistivity p of semi-insulating GaAs substrates is measured with high resolution using contactless capacitive mapping. The improved technique is capable of imaging mesoscopic p fluctuations correlated with the cellular structure of the dislocation density. The results compare favorably with data obtained by point contact topography. A rneasurement and statistical analysis procedure is described that allows an individual evaluation of the macro- and mesocopic contributions to the total on-wafer p variation.