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Computer-aided resist modelling with extended xmas in X-ray lithography

 

Microelectronic engineering (1989), Nr.9, S.629-633
ISSN: 0167-9317
Englisch
Zeitschriftenaufsatz
Fraunhofer ISIT ()

Abstract
There is an increasing need for computer-aided lithography simulation and modelling in IC manufacture. Software programs are well-established tools in simulating the problems affecting line-edge profiles for different exposure arrangements and development processes. The simulation program XMAS (X-Ray Lithography Modelling and Simulation) is designed to evaluate a large variety of exposure and development situations in X-ray lithography. After the imaging procedure, a simulation of the development process can be performed resulting in two or three-dimensional resist profiles at various stages in the process. Results are presented concerning the development behaviour of standard and experimental positive three-component-system (3CS) resists as well as experimental negative tone resists. The influence of secondary electrons backscattered from different substrate layers is investigated. The algorithm for three-dimensional development based on a ray-tracing formalism is described.

: http://publica.fraunhofer.de/dokumente/PX-8340.html