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Comparison of vertically-compact high-speed GaAs and In0.35Ga0.65As MQW diode lasers designed for monolithic integration.

Vergleich zwischen GaAs und In0.35Ga0.65As Hochgeschwindigkeit-MQW-Laserdioden mit kompakter vertikaler Struktur für monolithische Integration


Institute of Electrical and Electronics Engineers -IEEE-:
13th IEEE International Semiconductor Laser Conference. Proceedings
New York/N.Y., 1992
S.176-177 : Abb.,Tab.,Lit.
International Semiconductor Laser Conference <13, 1992, Takamatsu>
Fraunhofer IAF ()
monolithic integration; optical data link; optische Data-Verbindung; quantum well lasers; strained layer; verspannte Schicht

A detailed comparison is presented between vertically-compact high-speed GaAs and Insub0.35Gasub0.65As MQW diode laser structures suitable for integration with MODFET driver circuits. Both devices show superior performance, although the advantages of replacing the GaAs QW's with pseudomorphic InGaAs QW's are clearly demonstrated.