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Comparison between surface channel PMOS transistors processed with optical and X-ray lithography with regard to X-ray damage

: Naumann, F.; Bernt, H.; Friedrich, D.; Kaatz, A.; Windbracke, W.

Microelectronic engineering 11 (1990), Nr.1-4, S.259-262
ISSN: 0167-9317
International Conference on Microlithography: Microcircuit Engineering (ME) <15, 1989, Cambridge>
Fraunhofer ISIT ()
photolithography; X-ray effects; X-ray lithography

In order to determine the influence of X-ray induced radiation damages, surface channel PMOS devices with partially scaled 0.5 mu m design rules were fabricated using optical and X-ray lithography. With a gate oxide thickness dox=10 nm the X-ray processed transistors show a threshold voltage shift Delta VT=-10 mV, whereas transistors with dox=20 nm show a VT shift of Delta VT=-40 mV relative to optically processed devices. The degradation under hot carrier injection in terms of deviations of Delta gm, Delta VT, Delta ID and Delta S is almost identical for both types of transistors and is of the order of 4%.