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1992
Journal Article
Titel
Comparative study of the SbGa heteroantisite and off-center OAs in GaAs
Alternative
Vergleichende Untersuchung des SbGa Antisite und des "Off Center" OAs Defektes in GaAs
Abstract
The (O/plus) donor level of the SbsubGa heteroantisite and the off-center OsubAs-induced EL3 level in GaAs have very similar thermal emission rates for electrons and are therefore difficult to distinguish by deeplevel transient spectroscopy (DLTS). It is shown that a reliable DLTS assessment of the SbsubGa level is nevertheless possible if additional quantitative information about SbsubGa and EL3 is obtained from magnetic resonance and local vibrational mode spectroscopy, respectively.
Author(s)