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CMOS/SIMOX-RF-frontend for 1.7 GHz

: Eggert, D.; Budde, W.

Grünbacher, H.:
ESSCIRC '96. 22nd European Solid State Circuits Conference. Proceedings
Gif-sur-Yvette: Ed. Frontieres, 1996
ISBN: 2-86332-197-8
S.208-211 : Lit.
European Solid State Circuits Conference (ESSCIRC) <22, 1996, Neuachatel>
Fraunhofer IMS, Außenstelle Dresden ( IPMS) ()
Balun; CMOS; Halbleitermischer; induktives Bauelement; SIMOX

The cointegration of high-speed NMOS devices and inductive elements by means of a SIMOX-technology with high-resistive substrates enables operating frequencies which meet the needs of modern communication systems. This paper describes a RF frontend operating in the frequency range 1.4 to 1.9GHz. The performance of the presented circuit proves the capability of this technology to realize complete RF-systems on a single chip.