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CMOS magnetic-field sensor system



IEEE journal of solid-state circuits 29 (1994), Nr.8, S.1002-1005
ISSN: 0018-9200
European Solid State Circuits Conference (ESSCIRC) <19, 1993, Sevilla>
Fraunhofer IMS ()
magnetic fields; magnetisches Feld; microelectronics; Mikroelektronik; sensor system

A magnetic-field sensor system integrated in CMOS technology with additional processing steps necessary for sensor fabrication is presented. The system contains a magnetoresistive permalloy microbridge acting as sensor, temperature compensation circuitry, programmable readout electronics, reference voltage bias, and clock generation. It features maximum magnetic flux sensitivity of 70 mV/µT (corresponds to the magnetic-field sensitivity of 88.2 mV/(A/m) @ µr = 1) and its temperature gain is below 260 ppm/øC in the range between -50øC and +100øC.