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A CMOS image sensor with combined analog nonvolatile storage capability



Hillenius, S.; Galloway, K.; Woerlee, P. ; IEEE Electron Devices Society:
International Electron Devices Meeting 1996. Technical digest
Piscataway, NJ: IEEE, 1996
ISBN: 0-7803-3393-4
ISBN: 0-7803-3394-2
ISBN: 0-7803-3395-0
ISBN: 0-7803-3396-9
International Electron Devices Meeting <42, 1996, San Francisco/Calif.>
Fraunhofer IMS ()
analogue storage; EEPROM; photoelement

A light-sensitive pmos-transistor in a floating n-well and combined with an analoge EEPROM has been fabricated as a single element in a standard 1.5 mu m single-poly CMOS/EEPROM technology. It provides nonvolatile weighted analog image storage and can be programmed in parallel, if implemented as an array. As an example, an image sensor with a nonvolatile analog programmable offset and sensitive adjustment has been realised.