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Chirp characteristics of 1.55 mu m InGaAs/InGaAlAs multiple quantum well laser diodes

Chirp-Eigenschaften vo 1.55 Mikrometer InGaAs/InGaAlAs Mehrfachquantenfilm-Laserdioden
 

IEEE Electron Devices Society; IEEE Lasers and Electro-Optics Society:
International Conference on Indium Phosphide and Related Materials, IPRM, 1997. Conference proceedings : 11 - 15 May 1997, Tara Hyanns Hotel and Resort Hyannis, Cape Cod, Massachusetts, USA
Piscataway, NJ: IEEE, 1997
ISBN: 0-7803-3898-7
ISBN: 0-7803-3899-5
ISBN: 0-7803-3900-2
S.PD3
International Conference on Indium Phosphide and Related Materials (IPRM) <9, 1997, Hyannis/Mass.>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()
chirp characteristics; quantum well lasers; semiconductor laser

: http://publica.fraunhofer.de/dokumente/PX-7709.html