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Charakterisierung mehrfach gebondeter Wafer für die Sensorik

Characterization of multiple bonded wafers for sensor applications
: Wiemer, M.; Hiller, K.; Hopfe, S.; Petzold, M.; Reiche, M.; Geßner, T.; Gösele, U.

Michel, B.; Winkler, T. ; Deutscher Verband für Materialforschung und -prüfung e.V. -DVM-, Arbeitskreis Mikrosystemtechnik:
Micro Materials, Micro Mat 1995. Proceedings : Werkstofforschung, Werkstoffprüfung, Werkstoffeinsatz in der Mikrosystemtechnik, 28. - 29.11.1995, Berliner Congress Center, BCC
Berlin: DVM, 1995
S.191-198 : Ill., Lit.
Conference Micro Materials (Micro Mat) <1, 1995, Berlin>
Fraunhofer IWM ()

Silicon direct bonding is of increasing importance for the preparation and packaging of 3-dimensional devices such as sensors and actuators. The application of silicon direct bonding is described for the preparation of acceleration sensors (devices, test chips). Advantages and disadvantages of the packaging technology are discussed. Analytical methods for yield are presented allowing the characterization of individual functional planes of the devices. Here, especially infrared, acoustic, and transmission-electronmicroscopy, respectively are used. In additional, fracture analyses (measurements of the bonding stress) are presented.