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Characterization of picosecond GaAs metal-semiconductor-metal photodetectors.

Charakterisierung von Pikosekunden-GaAs Metall-Halbleiter-Metall-Photodetektoren
 

Razeghi, M. ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
Physical concepts of materials for novel optoelectronic device applications. Vol. 2: Device physics and applications
Bellingham/Wash.: SPIE, 1991 (SPIE Proceedings Series 1362)
ISBN: 0-8194-0423-3
S.168-178
International Conference on Physical Concepts of Materials for Novel Optoelectronic Device Applications <1990, Aachen>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()
GaAs; Korrelationsmeßtechnik; metal-semiconductor-metal photodetector; Metall-Halbleiter-Metall-Photodetektor; Monte Carlo methods; photodiode; picosecond; Pikosekunde; sampling

Abstract
Interdigitated GaAs metal-semiconductor-metal Schottky photodiodes have been studied experimentally and theoretically. The time evolution of the response current has been measured by means of photoconductive and electrooptic sampling with a time resolution of 0.8 and 0.3 ps, respectively. The response current to a 70 fs laser pulse reaches maximum within 2-5 ps, then shows a fast decay of about 10 ps followed by a slower one. Self-consistent, two-dimensional Monte Carlo particle simulation predicts that the former is due to electrons, the latter to holes. With a sufficiently strong electric field the two species of carriers get separated. With increased light intensity a screened plasma forms that vanishes only through recombination which takes of the order of nanoseconds.

: http://publica.fraunhofer.de/dokumente/PX-7537.html