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1988
Journal Article
Titel
Characterization of GaAs crystals with different degrees of compensation - Electronic Raman scattering of photoneutralized acceptors
Alternative
Charakterisierung von GaAs Kristallen mit verschiedenen Kompensationsgraden - Elektronische Ramanstreuung an photoneutralisierten Akzeptoren
Abstract
Electronic Raman scattering (ERS) with below band-gap excitation at 1.064 mym has been used to assess residual shallow acceptors in undoped GaAs crystals with different degrees of compensation. Continuous wave excitation at a power density of approx. 1-5 kW/square cm photoneutralizes those shallow acceptors quantitatively which are compensated by the midgap El2 donor level. Therefore, the concentration of El2 compensated acceptors is measured by ERS. Pulsed excitation at a power density of approx. 20 MW/square cm leads furthermore to a partial neutralization of residual acceptors compensated by donors shallower than the EL2 level. This allows a semiquantitative analysis of those donors. Pulsed excitation enables also to assess residual shallow acceptors by ERS in n-type semiconducting GaAs. (IAF)