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Characterization of buried silicon-nitride formed by nitrogen implantation

: Beltz, J.; Vogt, H.; Kaat, E.H. te; Zimmer, G.

Nuclear instruments and methods in physics research, Section B. Beam interactions with materials and atoms 19/20 (1987), S.279-284 : Abb.,Lit.
ISSN: 0168-583X
Fraunhofer IMS ()

High temperature (420-450 degrees C) N2+-implantations at 300 keV (150 keV per atom) into high resistivity p-type (001)-silicon substrates yield buried amorphous SiNx-layers for N-doses ranging from .1 to 1 x E18 cm-2. Thermal anneal at 1200 degrees C in dry N2-atmosphere leads to epitaxial crystallization of the silicon matrix with embedded SiNx-precipitates of three different orientations relative to the Si-matrix. At high doses these nitride grains eventually form a continuous insulating alpha-Si3N4 layer. Detailed optical, AES and TEM investigations have been performed to study the nucleation and grain growth for different N-concentrations in the profile maximum. The main topic of this paper is the structural TEM analysis of the early stages of grain growth. (IMS)