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Characterization of anodic fluoride films on Hg1-xCdxTe

Charakterisierung von anodischen Fluoridschichten auf Hg1-xCdxTe

Longshore, R.E.; Baars, J.W. ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
Growth and characterization of materials for infrared detectors and nonlinear optical switches : 2-3 April 1991, Orlando, Florida
Bellingham/Wash.: SPIE, 1991 (SPIE Proceedings Series 1484)
ISBN: 0-8194-0593-0
S.55-66 : Abb.,Tab.,Lit.
Conference "Growth and Characterization of Materials for Infrared Detectors and Nonlinear Optical Switches" <1991, Orlando/Fla.>
Fraunhofer IAF ()
electronic property; elektronische Eigenschaft; HgCdTe; Infrarotdetektor; IR detector; passivation; Passivierung

Experimental results concerning the properties of anodic fluoride films grown on Hg1-xCdxTe(0.2 equal or smaller than x equal or smaller than 0.3) are presented and discussed. The analysis of the growth rate and XPS measurements indicate that the films are composed of a mixture of Cd, Hg and Te fluorides, together with unreacted HgTe and elemental Te. The films are characterized by some of their optical, electrical and chemical properties. Capacitance-voltage measurements of MIS devices are employed to determine the electronic properties of the anodic fluoride/HgCdTe interface. The results show that a positive and unstable charge density is present at the interface.