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Characterization and modeling of integrated photosensors in standard CMOS technology

 
: Baureis, P.; Gerber, J.

Baccarani, G.; Rudan, M.:
ESSDERC '96. 26th European Solid State Device Research Conference. Proceedings
Gif-sur-Yvette: Ed. Frontieres, 1996
ISBN: 2-86332-196-X
S.735-738
European Solid State Device Research Conference (ESSDERC) <26, 1996, Bologna>
Englisch
Konferenzbeitrag
Fraunhofer IIS A ( IIS) ()
CMOS; integrated; optics; photodiode; phototransistor; spektrale Empfindlichkeit; Transimpedanzverstärker

Abstract
This paper describes the electrical and spectral characteristics of different layers to construct photosensitive elements in standard 1.2 mu m CMOS technology. The use of commercial CMOS processes guarantees good reproduceability of the integrated sensors and optimized cointegration with sensor signal conditioning circuits. Deep and shallow photosensitive PN diodes and a vertical PNP phototransistor are investigated. Electrical on-wafer measurements with optical stimulation are performed and parameter extraction algorithms are established to create SPICE models. These models are suitable for the development of opto-ASICs. The validity of the model is tested using a 0.3 mm2 photodiode together with a two-stage transimpedance amplifier with a transimpedance of 5 MOhm at a 3 dB bandwidth of 90 kHz. the whole circuit is packaged using an optically transparent window in a plastic package.

: http://publica.fraunhofer.de/dokumente/PX-7468.html