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Cathodoluminescence study of erbium in La1-xErxF3 epitaxial layers on Si-111-.

Kathodolumineszenz-Analyse von Erbium in La1-xErxF3 Epitaxieschichten auf Si111
: Müller, H.D.; Schneider, J.; Lüth, H.; Strümpler, R.


Applied Physics Letters 57 (1990), Nr.23, S.2422-2424 : Abb.,Lit.
ISSN: 0003-6951
ISSN: 1077-3118
Fraunhofer IAF ()
cathodoluminescence; Kathodolumineszenz; molecular beam epitaxy; Molekularstrahlepitaxie; optoelectronics; Optoelektronik; silicium substrate; Silizium Substrat

Erbium-substituted La1-xErxF3 lanthanum trifluoride epitaxial layers have been grown on Si (111) substrates by molecular beam epitaxy (MBE). Strong near-infrared luminescence, peaked at 1.54 mym, was observed from such films under electron beam excitation. This cathodoluminescence arises from the intra-4f-shell transitions. The infrared spectra reveal that MBE-grown LaF3 layers on Si (111) crystallize in the hexagonal tysonite structure, typical for bulk LaF3 single crystals.