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Carrier transport effects in undoped In(0.35)Ga(0.65)As/GaAs MQW lasers determined from high-frequency impedance measurements

Bestimmung von Ladungsträger-Transporteigenschaften in undotierten In(0.35)Ga(0.65)As/GaAs-MQW-Lasern aus Hochfrequenz-Impedanzmessungen
 

Institute of Electrical and Electronics Engineers -IEEE-:
LEOS '94. 7th Annual Meeting. Conference Proceedings. Vol.1
New York/N.Y., 1994
S.161-162 : Abb.
IEEE Lasers and Electro-Optics Society (Annual Meeting) <7, 1994, Boston>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()
carrier escape time; high-frequency impedance; Hochfrequenzimpedanz; InGaAs/GaAs; Ladungsträgeremissionszeit; MQW

: http://publica.fraunhofer.de/dokumente/PX-7297.html