Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

Carrier escape time in GaAs/AlGaAs and InGaAs/GaAs quantum-well lasers

Emissionszeit von Ladungsträgern in GaAs/AlGaAs und InGaAs/GaAs Quantenfilmlasern
 

Morton, P.A.; Crawford, D.L. ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
High-speed semiconductor laser sources : 1-2 February 1996, San Jose, California
Bellingham, Wash.: SPIE, 1996 (SPIE Proceedings Series 2684)
ISBN: 0-8194-2058-1
S.17-26
Conference "High-Speed Semiconductor Laser Sources" <1996, San Jose/Calif.>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()
carrier transport; electrical impedance; elektrische Impedanz; Ladungsträgertransport; QW-laser; Temperaturabhängigkeit; temperature dependence

Abstract
The transport of carriers along the confinement region, the carrier capture into, and the carrier escape out of the quantum wells (QWs) are limiting processes affecting the high-frequency properties of QW lasers. The influence of these processes on the laser performance depends mainly on the ratio of the effective carrier transport/capture time and the effective escape time. We present experimental results about the escape times for GaAs/A1GaAs and InGaAs/GaAs high-speed QW lasers with varied geometrical dimensions (cavity width and length), number of QWs, In-concentrations, and p-doping levels in the active region, as extracted from electrical impedance measurements in the sub-threshold regime. In addition to the expected increase of the escape time with increasing QW barrier height, we observe an important increase in the escape time for lasers with p-doping. The escape time dependences on the carrier concentration and on the temperature are determined and discussed.

: http://publica.fraunhofer.de/dokumente/PX-7293.html