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Carrier capture and escape times in In(0,35)Ga(0,65)As-GaAs multiquantum-well lasers determined from high-frequency electrical impedance measurements

Mittels Hochfrequenzmessungen der elektrischen Impedanz bestimmte Eingangs- und Emissionszeiten von Ladungsträgern in In(0,35)Ga(0,65)As-GaAs Mehrfachquantenfilm-Lasern


IEEE Photonics Technology Letters 8 (1996), S.1294-1296
ISSN: 1041-1135
Fraunhofer IAF ()
carrier lifetime; GaAs; InGaAs; Ladungsträgerlebensdauer; laser; multiquantum well

We present experimental results on the high- frequency electrical impedance of In(0.35)Ga(0.65)As-GaAS multiquantum-well lasers with varied p-doping levels in the active region. The analysis of the data, using a simple three rate equation model, provides information about the dynamical time constants (the carrier lifetime, the effective carrier capture and escape times) under the laser operation conditions. The addition of p-doping increases the carrier escape time at threshold from 0.7 ns, extracted for the undoped devices, up to a value higher than 2 ns for the p-doped lasers. The effective capture time is estimated to be between 2 and 5 ps.