Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

Buried waveguide double-heterostructure PbEuSe-lasers grown by MBE

Doppelheterostruktur-Laser aus PbEuSe mit vergrabenem Wellenleiter
 
: Böttner, H.; Lambrecht, A.; Schlereth, K.-H.; Spanger, B.; Tacke, M.

Infrared physics 30 (1990), Nr.5, S.449-454
ISSN: 0020-0891
Englisch
Zeitschriftenaufsatz
Fraunhofer IPM ()
diode laser; Diodenlaser; infrared laser; infrared waveguide; Infrarotlaser; Infrarotwellenleiter; resonator; resonatorstruktur

Abstract
Buried heterostructure (BH) lasers with a PbSe active layer and PbEuSe confinement layers were fabricated using molecular beam epitaxy (MBE). The waveguide was defined by photolithography and an ion milling process. By MBE overgrowth of the etched structure with a PbEuSe layer the BH-laser was formed. The lasers operated cw with low threshold currents (8 mA at 80 K) in the spectral range from 1280 cm-1 (30 K) to 1800 cm-1 (160 K). The spectral characteristics of these lasers were superior to comparable DH stripe lasers. These lasers were the first with IV/VI-MBE overgrowth process of etched lateral structures.

: http://publica.fraunhofer.de/dokumente/PX-7035.html