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Blue and green electroluminescence from a porous silicon device

 
: Steiner, P.; Kozlowski, F.; Lang, W.

:

IEEE Electron Device Letters 14 (1993), Nr.7
ISSN: 0741-3106
ISSN: 0193-8576
Englisch
Zeitschriftenaufsatz
Fraunhofer IFT; 2000 dem IZM eingegliedert
electroluminescence; led; porous silicon

Abstract
The fabrication and the characteristics of light emitting porous silicon devices are presented. Under the influence of UV illumination during anodization a nanoporous layer on n-substrate is formed. The wafer shows weak photoluminescence with a maximum at 640nm. The porous layer is contacted by pads consisting of semitransparent gold. When voltage is applied, electroluminescence in the 560 to 480nm range can be observed. The current-voltage characteristic is strongly rectifying. Light emission occurs under forward bias. A possible model for the shift of the electroluminescence towards higher energies is given.

: http://publica.fraunhofer.de/dokumente/PX-6859.html