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1985
Journal Article
Titel
Behavior of analog MOS integrated circuits at high temperatures
Abstract
High-temperature behavior of analog MOS circuits is investigated. Thermal effects on small-signal characteristics of MOS transistors are studied and parameters of MOS amplifier operating at high temperatures are calculated. The predicted performance has been experimentally verified and high-temperature measurements of an operational amplifier and a switched-capacitor precision amplifier are presented. (IMS)