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Rekombination an Versetzungen in Silizium und Germanium

 
: Weronek, K.; Weber, J.; Alexander, H.; Buchner, R.

1991
Deutsche Physikalische Gesellschaft (Tagung) <1991, Münster>
Deutsch
Tagungsband
Fraunhofer IFT; 2000 dem IZM eingegliedert
D-band; dislocation; germanium; impurity; photoluminescence; Photolumineszenz; recombination; Silizium; Versetzung; Verunreinigung

Abstract
An optical method is described that allows the nondestroying measurement of the quality of planarization used in the fabrication of integrated circuits. A HeNe-laser beam is directed onto the surface of the structured silicon wafer and reflected. The intensity of the diffuse scattered light is used to determine the flatness of the wafer surface.

: http://publica.fraunhofer.de/dokumente/PX-55771.html