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Band-gap narrowing in heavily doped silicon - a comparison of optical and electrical data.

Bandlücken-Reduzierung in hochdotierten Silizium - Ein Vergleich von optischen und elektrischen Messdaten
 
: Alamo, J.A. del; Wagner, J.

:

Journal of applied physics 63 (1988), Nr.2, S.425-429 : Abb.,Tab.,Lit.
ISSN: 0021-8979
ISSN: 1089-7550
Englisch
Zeitschriftenaufsatz
Fraunhofer IAF ()
dotierungsabhaengige Bandlückenenergie; hochdotiertes Silizium; Photolumineszenz

Abstract
The band-gap narrowing in heavily doped silicon has been studied by optical techniques-namely, photoluminescence and photoluminescence excitation spectroscopy-and by electrical measurements on bipolar transistors. The optical experiments give a consistent set of data for the band-gap narrowing in n- and p-type material at low temperatures as well as at room temperature. A good agreement is found between the optical and electrical data removing the discrepancies existing so far in the literature. (IAF)

: http://publica.fraunhofer.de/dokumente/PX-5574.html