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Auger recombination in intrinsic GaAs

Auger-Rekombination in intrinsischem GaAs
: Strauss, U.; Rühle, W.W.; Köhler, K.


Applied Physics Letters 62 (1993), Nr.1, S.55-57
ISSN: 0003-6951
ISSN: 1077-3118
Fraunhofer IAF ()
Auger recombination; Auger-recombination; III-V Halbleiter; III-V semiconductors; timeresolved photoluminescence; zeitaufgelöste Photolumineszenz

The recombination kinetics of the electron-hole plasma in strongly excited, intrinsic GaAs is investigated at room temperature by time-resolved photoluminescence using a line-shape analysis of transient spectra. Special structuring of the samples prevents stimulated emission and diffusion. Population of higher energetic subsidiary conduction-band valleys must be taken into account for densities bigger than 1.5 x 10high19 cmhighminus3. A significant influence of Auger recombination is detected for densities bigger than 2.5 x 10high19 cmhighminus3. The bimolecular recombination coefficient and an effective Auger coefficient are found to be B is equal to (1.7 plusminus 0.2) x 10highminus10 cmhigh3 shighminus1 and Csubeff is equal to (7 plusminus 4) x 10highminus30 cmhigh6 shighminus1, respectively.