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In situ film thickness and temperature monitoring of MBE-growth of vertical cavity surface emitting lasers (VCSELs) by reflexion supported pyrometric interferometry (RSPI)

: Böbel, F.G.

Erlangen, 1994
Fraunhofer-Applikationsberichte, 1
Fraunhofer IIS A ( IIS) ()
in situ film thickness; MBE-growth; pyrometric interferometry; pyrometrische Interferometrie; Schichtdickenmessung; VCSEL

In this application note, the PYRITTE Measurement system is used to simultaneously monitor film thickness and temperature during MBE growth by employing reflexion support pyrometric interferometry (RSPI). The devices grown are VCSELs (Vertical Cavity Surface Emitting Lasers) consisting of a total of 82 layers, including quarter wavelengths stacks as well as quantum wells. The thickness resolution measured was better than 0.5 nm for each layer and the temperature resolution was below 0.5 øC. The emitted as well as the reflected signals for the whole run (total run time 5 hours 47 minutes) are exhibited, demonstrating that PYRITTE is an excellent tool for monitoring MBE growth even for very demanding MBE scenarios. Implementing in situ thickness and temperature control results in a number of technological benefits. Yield increase, reduction of calibration runs as well as improved device performance are discussed.