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Assessment of the boron impurity in semi-insulating gallium arsenide by localized vibrational mode spectroscopy.

Nachweis von Bor in semiisolierendem GaAs mit der Infrarot-Spektroskopie
: Alt, H.; Maier, M.


Semiconductor Science and Technology 6 (1991), S.343-347 : Abb.,Tab.,Lit.
ISSN: 0268-1242
ISSN: 1361-6641
Fraunhofer IAF ()
Bor-Verunreinigung; boron contamination; IR Schwingungsspektroskopie; LEC; liquid-encapsulated Czochralski; localized vibrational mode spectroscopy; semi-insulating GaAs; semiisolierendes GaAs

The determination of the boron background contamination in semi-insulating GaAs by localized vibrational mode spectroscopy has been studied. Comparison with secondary ion mass spectrometry shows that there is a strictly linear correlation between the total boron concentration and the strength of the infrared absorption line at 517 cm-1 (11BGa). A new calibration factor is given: f equal 11.5 x 10high16cm-1. The detection limit for the infrared method is at least 1 x 10high16cm-3. Experimental procedures and the influence of temperature and spectral resolution are discussed in detail.