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Arsenic incorporation in molecular beam epitaxy (MBE) grown (AlGaIn)(AsSb) layers for 2.0-2.5 mu m laser structures on GaSb substrates

Arseneinbau in mittels Molekularstrahlepitaxie hergestellten (AlGaIn)(AsSb)-Epitaxieschichten auf GaSb-Substrat für Laseranwendungen bei 2,0-2,5 Mikrometer


Journal of Crystal Growth 201/202 (1999), S.849-853
ISSN: 0022-0248
Fraunhofer IAF ()
AlGaAsSb; GaInAsSb; GaSb; Halbleiterlaser; mid infrared; mittleres Infrarot; molecular beam epitaxy; Molekularstrahlepitaxie; semiconductor laser

The incorporation of As and In during MBE growth in (AlGaIn)/(AsSb) layers used for the fabrication of diode lasers in the 2.0-2.5 mu m wavelength range has been investigated. The As content was found to depend linearly on the beam equivalent pressure for As mole fractions between y = 0.05 and y = 0.20. Broad area A1GaAsSb/GaInAsSb singlequantum well laser diodes with quasi-cw output at room temperature at an emission wavelength of 2.03 mu m and a threshold current density of 515 A/cm2 for 1370 mu m long and 70 mu m wide devices have been fabricated. In order to shift the emission wavelength of the laser structures to longer wavelengths, the growth of lattice matched AlGaAsSb/ GaInAsSb laser core structures with different In and As mole fractions in the quantum wells has been investigated.