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Application of the simulator "XMAS" on specific problems in sub-half micron lithography

: Oertel, H.; Betz, H.; Heuberger, A.

Microelectronic engineering (1985), Nr.3, S.387-394
ISSN: 0167-9317
International Conference on Microlithography <1985, Rotterdam>
Fraunhofer ISIT ()

The program XMAS, which allows the simulation of 3-D resist profiles in x-ray lithography has been used to evaluate the ultimate resolution capability and the replication of defects of this lithography method. It has been shown that 0.2 micrometers structures can be transferred with high process latitude at reasonable proximity gaps (30 micrometers). Dust particles (silicon, resist) up to 0.5 micrometers thickness do not seriously deteriorate the pattern transfer.